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Samsung to develop top-notch Performance Computing Structures with Launch of Industry’s First 3rd-generation (16GB) HBM2E

Samsung

This year it’s all about new and advanced technology year as the top brand Samsung Electronics Co Ltd. The world-leading in advanced memory technology. Recently announced the launch of ‘Flashbolt’, its third generation of 2E high bandwidth memory (HBM2E).

The new 16 gigabytes (GB) HBM2E is especially suitable for maximizing high-performance computing (HPC) systems. It is helping system manufacturers advance their supercomputers. AI-driven data analysis, and state-of-the-art graphics systems. timely manner.

With the introduction of the highest-performance DRAM available today, we are taking a critical step to improve our role as the innovative leader in the fast-growing premium memory market, “said Cheol Choi, executive vice president of Memory Sales and Marketing. at Samsung Electronics. “Samsung will continue to fulfill its commitment to provide truly differentiated solutions as we strengthen our advantage in the global memory market.”

Ready to deliver twice the capacity of the 8GB HBM2 ‘Aquabolt’ of the previous generation, the new Flashbolt also vividly increases performance and energy efficiency to significantly improve next-generation computer systems.

Samsung HBM Flashbolt
Photo Credit: Samsung

Furthermore, the capacity of 16 GB is achieved by vertically stacking eight layers of DRAM dies of class 10nm (1y) of 16 gigabits (Gb) on top of a buffer chip. This HBM2E package is interconnected in a precise arrangement of more than 40,000 micropumps “through-silicon through” (TSV), with each 16 Gb die containing more than 5,600 of these microscopic holes.

Samsung’s Flashbolt provides a highly reliable data transfer rate of 3.2 gigabits per second (Gbps) by leveraging a patented optimized circuit design for signal transmission while offering a memory bandwidth of 410GB / s per battery. Samsung HBM2E can also reach a transfer rate of 4.2Gbps, the maximum data rate tested to date, allowing a bandwidth of up to 538GB / s per battery in certain future applications. This would represent an improvement of 1.75x over the 307GB / s of Aquabolt.

Samsung expects to start volume production during the first half of this year. The company will continue to provide its second-generation Aquabolt line while expanding its third-generation Flashbolt offering, and will further strengthen collaborations with ecosystem partners in next-generation systems as they transition to HBM solutions across the world accelerates.

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