Samsung Electronics, a world groundbreaker in advanced memory technology. Announced today that it has begun mass-producing the industry’s first 16-gigabyte (GB) LPDDR5 mobile DRAM package for next-generation premium smartphones.
After mass production of the industry’s first 12 GB LPDDR5 in July 2019, the new 16 GB advance will lead the premium mobile memory market with additional capacity that allows enhanced 5G and AI features, including games with graphics and smart photography
Furthermore, the statement which is as following “Samsung is committed to bringing memory technologies to the forefront to allow consumers to enjoy incredible experiences through their mobile devices. We are excited to stay true to that commitment to our new first-line mobile solution for global device manufacturers, “said Cheol Choi, senior vice president of memory sales and marketing at Samsung Electronics.” With the introduction of a new product line based in our next-generation process technology later this year, Samsung will be able to fully address the future memory demands of global customers.
The data transfer rate for the 16 GB LPDDR5 reaches 5,500 megabits per second (Mb / s), approximately 1.3 times faster than the previous mobile memory (LPDDR4X, 4266Mb / s). Compared to an 8GB LPDDR4X package, the new mobile DRAM offers more than 20 percent energy savings while providing up to twice the capacity.
In addition, Samsung’s 16 GB LPDDR5 mobile DRAM package consists of eight 12 gigabits (Gb) chips and four 8 Gb chips, which equip premium smartphones with twice the DRAM capability found in many laptops and PCs for high-end games today.
Along with ultrafast performance, the industry’s largest capacity supports dynamic and responsive gaming, as well as ultra-high resolution graphics on premium smartphones for highly immersive mobile gaming experiences.
As Samsung continues to expand LPDDR5 mobile DRAM production at its Pyeongtaek site, the company plans to mass-produce 16Gb LPDDR5 products based on 10nm (1z) class third generation process technology in the second half of this year, in line with the development of a 6,400Mb / s chipset